page1of5 semiconductor 25pt series rohs rohs stansard scrs, 25a main features symbol value unit i t(rms) v /v drm rrm i gt 25 a v ma 4 40 to 600to1600 description 2 1 2 3 to220ab (non-lnsulated) 1 2 3 to220ab (lnsulated) (25ptxxa) (25ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com the25ptseriesofsiliconcontrolledrectifiersarehigh performance glass passivated technology, and are suitableforgeneralpurposeapplications. using clip assembly technology, they provide a superiorperformanceinsurgecurrentcapabilities. a 2 a 2 g a 1 to 263 ( d pak) 2 (25ptxxh) symbol i t rms ( ) rms on state current full sine wave i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 450 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 300 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions v 600 to1600 t =125oc j v drm v rrm repetitivepeakoffstatevoltage repetitivepeakreversevoltage (180conductionangle) 4 1 averageonstatecurrent (180conductionangle) i t av ( ) 16 a i = 2xl , t ns g gt r 100 to263/to220ab to220abinsulated tc=100c tc=83c maximumgatepower p gm w 10 t =20 p s t =125oc j to263/to220ab to220abinsulated tc=100c tc=83c 25 314
semiconductor rohs rohs 25pt series page2of5 www.nellsemi.com note : xx voltage , y = sensitivity = 25ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =33 d l v =v ,r =3.3k d drm l r =220 gk i =500ma,gateopen t i =1.2 i g gt v =67%v , gateopen d drm 0.2 40 20 500 ma vv ma v/s i =50a, t t =380s p t =125c j t =25c j t =25c j v a electrical specifications ( t j = 25 ) oc unless otherwise specified test conditions symbol v =v ,v =v d drm r rrm 1.6 5 2 r =220 gk max. max. min. max. min. min. max. max. max. 4 thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient 1.0 45 c/w c/w unit value symbol parameter d pak 2 /to220ab to220abinsulated to263( pak) d 2 to220ab/to220abinsulated 2.0 60 v gt v 0.77 v to t =125c j product selector part number voltage x x ( ) sensitivity 600 v a 40 m 1000 v 25ptxxa/25ptxxal 25ptxxh v v 800 v v package to220ab v v d pak 2 a 40 m ordering information 25ptxxay 25ptxxay ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 25ptxxaiy 25ptxxaiy 2.3g 50 tube 25ptxxhy 25ptxxhy to263(d pak) 2 2.0g 50 to220ab(insulated) tube r d m t =125c j t =125c j t =125c j max. max. 14 s=1cm 2 thresholdvoltage dynamicresistance min. 1.3 s=coppersurfaceundertab d 10 40 4 50 90 v 1200 v vv vv v v v v vv 25ptxxad/25ptxxald 25ptxxhd a 4~10 m a 4~10 m to220ab d pak 2 1600 v vv v v
semiconductor rohs rohs 25pt series page3of5 www.nellsemi.com ordering information scheme scr series package type current voltage code a to220ab(noninsulated) = ai to220ab(insulated) = 25=25a,i t(rms) 25 pt 06 06=600v h=to263(d pak) 2 08=800v 10=1000v fig.1 maximum average power dissipation versus average on-state current. fig.2 average and dc on-state current versus case temperature. fig.3 average and dc on-state current versus ambient temperature. fig.4 relative variation of thermal impedance versus pulse duration.(d2pak, and to-220ab) p w ( ) 0 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 l (a) t(av) l (a) t(av) 0 25 50 75 100 125 k=[z /r ] th th 1.00 0.10 0.01 1e3 1e2 1e1 1e+0 1e+1 1e+2 5e+2 - d i sensitivity gt 12=1200v d=4~10ma blank=4~40ma 360 i (a) t(av) 6 4 2 14 16 =180 d c . . to220abins to220ab d2pak t (c) case 20 22 24 26 28 t (c) amb =180 d c . . to220abins to220ab d2pak z j c th ( - ) z j a th ( - ) t (s) p 16=1600v
semiconductor rohs rohs 25pt series fig.7 surge peak on-state current versus number of cycles. fig.5 relative variation of thermal impedance versus pulse duration. (to-220ab ins) 1.0e02 l l l [t ]/l ,l ,l [t =25c] gt , , h l j gt h l j i a tm ( ) 0.0 0.5 1.0 1.5 2.0 2.5 40 100 fig.8 non-repetitive surge peak on-state current , and corresponding values of l t 2 50 0 1 10 100 1000 2000 100 1000 0.01 0.10 1.00 10.00 fig.9 on-state characteristics (maximum values) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 page4of5 www.nellsemi.com t (s) p z th(ja) z th(jc) l gt i i h l & t (c) j 20 0 20 40 60 80 120 140 t ms p = 0 1 one cycle nonrepetitive t initial=25 c j repetitive t =83c case number of cycles 100 150 200 250 300 350 l tsm t initial=25c j l t 2 dl/dt limitattion sinusoidal pulse width t p (ms) t max.: v =0.77v r =14m j to d v (v) tm s(cm ) 2 epoxy printed circuit board f copper thickness = 35 m 100 1000 0 4 12 8 16 20 24 28 32 36 40 0 30 20 10 40 50 60 70 80 fig.10 thermal resistance junction to versus copper surface (d pak) 2 ambient under tab fig.6 relative variation of gate trigger holding, and latching currents versus junction temperature. i a , l2t (a2s) tsm ( ) i a tsm ( ) k=[z /r ] th th 1.0e01 1.0e+01 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 r (c/w) th ja ( ) r4,
semiconductor rohs rohs rohs (g)3 1(a1) (a2) 2 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab 25pt series to-263(d pak) 2 2.79(0.110) 0.36(0.014) 2.79(0.110)2.29(0.090) 1.40(0.055)1.19(0.047) 0 0.254(0 0.01) to to 1.40(0.055)1.14(0.045) 4.83(0.190)4.06(0.160) 10.45(0.411) 9.65(0.380) 6.22(0.245) 9.14(0.360)8.13(0.320) 15.00(0.591) 0.940(0.037)0.686(0.027) 2.67(0.105)2.41(0.095) 5.20(0.205)4.95(0.195) 15.85(0.624) 3.56(0.140) 0.53(0.021) case style page5of5 www.nellsemi.com
|
